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H. von Bardeleben, Jean-Louis Cantin, A. Parisini, A. Bosio, R. Fornari. Conduction mechanism and shallow donor properties in silicon-doped ɛ -G a 2 O 3 thin films: An electron paramagnetic resonance study. Physical Review Materials, 2019, 3 (8), pp.084601. ⟨10.1103/PhysRevMaterials.3.084601⟩. ⟨hal-03924960⟩
Dépôts en texte intégral
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Mots clés
Photoluminescence
Pulsed laser deposition
Multilayer
Defects
8140Ef
Rutherford backscattering spectrometry RBS
EPR
XRD
7630Lh
SiC
Ferromagnetic resonance
Raman spectroscopy
PIXE
Al2O3
Aluminum
Annealing
Isotopic Tracing
AFM
Transparent conductive oxide TCO
Growth
Ageing
Interface defects
Capillary condensation
Energy loss
NRA
17O
Nitridation
7550Ee
Epitaxial growth
Atomic Layer Deposition ALD
17Op
27Ald p&α
GaMnAs
Epitaxy
Channeling
Magnetization curves
Nanoparticles
Adsorbed layers
NRP
Nuclear reaction analysis
Topological insulators
Oxygen deficiency
Ion implantation
Stable isotopic tracing
Adsorption Isotherms
Hysteresis
18O
18O resonance
ADSORPTION DESORPTION HYSTERESIS
Magnetic anisotropy
Kossel diffraction
Diffusion
2H
Aluminium
Indium oxide
AC susceptibility
Acoustic propreties of solid
3C-SiC
Silicon
13C
15N
Silica
27Alda
Alloys
Nickel
Periodic multilayer
Pb centers
Metal-insulator transition
Sputtering
Acoustic
Topological defects
XPS
Charge exchange
Nanostructures
Gold
Oxidation
Low energy electron diffraction LEED
Thin films
Zinc oxide
Silicon carbide
X-ray diffraction
Silicon Carbide
RBS
Evaluation
Adsorption
HfO2
Density functional theory
Thin film
ALD
Magnetic semiconductors
Ion beam analysis
7550Pp
Measurement
6855Jk
27Aldp
Nuclear resonance profiling NRP
Passivation
17Opp
Auger electron spectroscopy AES
Gallium oxide