HAL TEI export of lirmm-00106041 CCSD CC0 1.0 - Universal

HAL API Platform

 Physics and Design Optimization of ESD Diode for 0.13mm PD-SOI Technology Christophe Entringer 178082-0 Philippe Flatresse 178083-0 Pascal Salomé 178136-0 Pascal Nouet c95e5b78f0a7b66fc9e249fd1cbf864e lirmm.fr pascal-nouet 6242 17602-6242 https://orcid.org/0000-0003-2137-2623 https://www.idref.fr/079135196 Florence Azaïs 2a1e3cfd086ca8bab8f14e74f45dee9b lirmm.fr florence-azais 8583 14533-8583 https://www.idref.fr/114259453 https://orcid.org/0000-0001-6458-5018 Christine Carvalho De Matos 10103945d6df12b14430343989bb0f6f lirmm.fr 2006-10-13 10:22:59 2025-08-13 03:10:28 2016-11-23 09:41:41 2005-09-08 contributor Christine Carvalho De Matos 10103945d6df12b14430343989bb0f6f lirmm.fr CCSD lirmm-00106041 https://hal-lirmm.ccsd.cnrs.fr/lirmm-00106041 entringer:lirmm-00106041 <i>EOS/ESD: Electrical Overstress/Electrostatic Discharge</i>, Sep 2005, Anaheim, United States EOS/ESD: Electrical Overstress/Electrostatic Discharge, Sep 2005, Anaheim, United States CNRS - Centre national de la recherche scientifique SysMic Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier MIC Département Microélectronique Mathématiques, Informatique, Physique et Systèmes Université de Montpellier Université de Montpellier (2015-2021) International No No Yes Yes Physics and Design Optimization of ESD Diode for 0.13mm PD-SOI Technology Christophe Entringer 178082-0 Philippe Flatresse 178083-0 Pascal Salomé 178136-0 Pascal Nouet c95e5b78f0a7b66fc9e249fd1cbf864e lirmm.fr pascal-nouet 6242 17602-6242 https://orcid.org/0000-0003-2137-2623 https://www.idref.fr/079135196 Florence Azaïs 2a1e3cfd086ca8bab8f14e74f45dee9b lirmm.fr florence-azais 8583 14533-8583 https://www.idref.fr/114259453 https://orcid.org/0000-0001-6458-5018 Electrical Overstress/Electrostatic Discharge Symposium EOS/ESD: Electrical Overstress/Electrostatic Discharge 2005-09-08 2005-09-16 Anaheim United States 2005 English Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Conference papers Conference papers Conference papers

This paper investigates the physics of 0.13 mum partially depleted SOI gated diodes through TLP measurements and TCAD simulations. The impact of gate length, well type, oxide thickness, gate to contact distance and presence of gate on ESD performance are evaluated and discussed. It is shown that the gate coupling effect decreases ESD performance.

 STMicroelectronics [Crolles] ST-CROLLES
850 rue Jean Monnet BP 16 38926 Crolles
http://www.st.com Conception et Test de Systèmes MICroélectroniques SysMIC
http://www.lirmm.fr/recherche/equipes/sysmic 139590827 0000000405990488 199111950H https://ror.org/013yean28 Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier LIRMM 1995-01-01 2021-12-31
161 rue Ada - 34095 Montpellier
https://www.lirmm.fr 0000000120970141 https://ror.org/051escj72 Université de Montpellier UM 2021-12-31
163 rue Auguste Broussonnet - 34090 Montpellier
http://www.umontpellier.fr/ 02636817X 0000000122597504 https://ror.org/02feahw73 Centre National de la Recherche Scientifique CNRS 1939-10-19
https://www.cnrs.fr/