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A Compact DC Model of Gate Oxide Short Defect

Abstract : In this paper a new electrical transistor compact model including a gate oxide short defects is proposed based on a charge sheet model approach. The basic equations and the topology of the model are presented in detail. It is demonstrated that the electrical behaviour of the proposed model matches in a satisfactory way the defective transistor behaviour.
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Contributor : Christine Carvalho De Matos Connect in order to contact the contributor
Submitted on : Monday, October 23, 2006 - 7:43:12 AM
Last modification on : Friday, August 5, 2022 - 10:48:15 AM

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Rachid Bouchakour, Jean-Michel Portal, Jean-Marc J.-M. Galliere, Florence Azaïs, Yves Bertrand, et al.. A Compact DC Model of Gate Oxide Short Defect. Microelectronic Engineering, Elsevier, 2004, 72 (1-4), pp.140-148. ⟨10.1016/j.mee.2003.12.051⟩. ⟨lirmm-00108564⟩



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