A Compact DC Model of Gate Oxide Short Defect

Abstract : In this paper a new electrical transistor compact model including a gate oxide short defects is proposed based on a charge sheet model approach. The basic equations and the topology of the model are presented in detail. It is demonstrated that the electrical behaviour of the proposed model matches in a satisfactory way the defective transistor behaviour.
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Article dans une revue
Microelectronic Engineering, Elsevier, 2004, 72 (1-4), pp.140-148. 〈10.1016/j.mee.2003.12.051〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00108564
Contributeur : Christine Carvalho de Matos <>
Soumis le : lundi 23 octobre 2006 - 07:43:12
Dernière modification le : jeudi 7 février 2019 - 17:13:43

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Rachid Bouchakour, Jean-.Michel Portal, Jean-Marc Galliere, Florence Azaïs, Yves Bertrand, et al.. A Compact DC Model of Gate Oxide Short Defect. Microelectronic Engineering, Elsevier, 2004, 72 (1-4), pp.140-148. 〈10.1016/j.mee.2003.12.051〉. 〈lirmm-00108564〉

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