Resistive-Open Defect Injection in SRAM Core-Cell: Analysis and Comparison Between 0.13 um and 90 nm Technologies - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Communication Dans Un Congrès Année : 2005

Resistive-Open Defect Injection in SRAM Core-Cell: Analysis and Comparison Between 0.13 um and 90 nm Technologies

Fichier non déposé

Dates et versions

lirmm-00136906 , version 1 (15-03-2007)

Identifiants

  • HAL Id : lirmm-00136906 , version 1

Citer

Luigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Magali Bastian Hage-Hassan. Resistive-Open Defect Injection in SRAM Core-Cell: Analysis and Comparison Between 0.13 um and 90 nm Technologies. DAC: Design Automation Conference, Jun 2005, Anaheim, CA, United States. pp.857-862. ⟨lirmm-00136906⟩
78 Consultations
0 Téléchargements

Partager

More