Resistive-Open Defect Injection in SRAM Core-Cell: Analysis and Comparison Between 0.13 um and 90 nm Technologies - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Conference Papers Year : 2005

Resistive-Open Defect Injection in SRAM Core-Cell: Analysis and Comparison Between 0.13 um and 90 nm Technologies

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Micro and nanotechnologies/Microelectronics

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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00136906

Submitted on : Thursday, March 15, 2007-4:59:31 PM

Last modification on : Friday, March 24, 2023-2:52:48 PM

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lirmm-00136906 , version 1 (15-03-2007)

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  • HAL Id : lirmm-00136906 , version 1

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Luigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Magali Bastian Hage-Hassan. Resistive-Open Defect Injection in SRAM Core-Cell: Analysis and Comparison Between 0.13 um and 90 nm Technologies. DAC: Design Automation Conference, Jun 2005, Anaheim, CA, United States. pp.857-862. ⟨lirmm-00136906⟩

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