Comparison of the Benefits, From SiO2 to Ultralow-K Dielectric and Air Spacing Introduction, in Term of Interconnects Performances, for the Future High Speed Ic's in a Multicoupled Lines System - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Conference Papers Year : 2007

Comparison of the Benefits, From SiO2 to Ultralow-K Dielectric and Air Spacing Introduction, in Term of Interconnects Performances, for the Future High Speed Ic's in a Multicoupled Lines System

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Micro and nanotechnologies/Microelectronics

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Submitted on : Wednesday, May 23, 2007-4:38:45 PM

Last modification on : Wednesday, January 24, 2024-9:54:18 AM

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lirmm-00148905 , version 1 (23-05-2007)

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Freddy Ponchel, Jean-François Legier, Erick Paleczny, Christophe Seguinot, Denis Deschacht. Comparison of the Benefits, From SiO2 to Ultralow-K Dielectric and Air Spacing Introduction, in Term of Interconnects Performances, for the Future High Speed Ic's in a Multicoupled Lines System. 11th IEEE Workshop on Signal Propagation on Interconnects, SPI 2007, May 2007, Genova, Italy. pp.24-28, ⟨10.1109/SPI.2007.4512199⟩. ⟨lirmm-00148905⟩

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