Electrical Simulation Model of the 2T-FLOTOX Core-Cell for Defect Injection and Faulty Behavior Prediction in eFlash Memories - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Conference Papers Year : 2007

Electrical Simulation Model of the 2T-FLOTOX Core-Cell for Defect Injection and Faulty Behavior Prediction in eFlash Memories

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Micro and nanotechnologies/Microelectronics

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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00158543

Submitted on : Friday, June 29, 2007-9:52:03 AM

Last modification on : Friday, March 24, 2023-2:52:49 PM

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lirmm-00158543 , version 1 (29-06-2007)

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Olivier Ginez, Jean-Michel Daga, Patrick Girard, Christian Landrault, Serge Pravossoudovitch, et al.. Electrical Simulation Model of the 2T-FLOTOX Core-Cell for Defect Injection and Faulty Behavior Prediction in eFlash Memories. ETS: European Test Symposium, May 2007, Freiburg, Germany. pp.77-82, ⟨10.1109/ETS.2007.20⟩. ⟨lirmm-00158543⟩

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