Bandgap Reference Optimisation from On-Chip Eg, Xti Value Extraction - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Journal Articles Analog Integrated Circuits and Signal Processing Year : 2002

Bandgap Reference Optimisation from On-Chip Eg, Xti Value Extraction

Abstract

The temperature dependence of the IC(VBE) relationship can be characterised by two parameters: EG and XTI. They are usually obtained from measured VBE(T) values, using least square algorithm at a constant collector current. This method involves an accurate measurement of VBE and of the operating temperature. A new configurable test structure dedicated to their extraction is presented in this paper. It allows a direct measurement of the die temperature and consequently an accurate measurement of VBE(T). This new technique is implemented on a ST-Microelectronics BiCMOS process. Resulting experimental data are analysed and discussed. An improvement of the bandgap reference design is presented.

Dates and versions

lirmm-00268446 , version 1 (01-04-2008)

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Wenceslas Rahajandraibe, Christian Dufaza, Daniel Auvergne, Bruno Cialdella, Bernard Majoux, et al.. Bandgap Reference Optimisation from On-Chip Eg, Xti Value Extraction. Analog Integrated Circuits and Signal Processing, 2002, 33, pp.85-94. ⟨10.1023/A:1021203712560⟩. ⟨lirmm-00268446⟩
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