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Book Sections Year : 2002

Noise Optimisatioin of a Piezoresistive CMOS MEMS for Magnetic Field Sensing

Abstract

Using 100% industrial fabrication processes, the design and the fabrication of a monolithic CMOS MEMS magnetic field sensor, targeting noise reduction, are developed in this paper. The sensor is based on a resonant cantilever structure with optimized electronics for signal treatment and noise filtering in order to achieve competitive performances. With a final sensitivity of 350Vrms/T and a 2μT resolution, the system is able to measure earth natural magnetic field.
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Dates and versions

lirmm-00268487 , version 1 (01-10-2022)

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Vincent Beroulle, Yves Bertrand, Laurent Latorre, Pascal Nouet. Noise Optimisatioin of a Piezoresistive CMOS MEMS for Magnetic Field Sensing. SOC Design Methodologies, 90, Kluwer Academic Publishers, pp.461-472, 2002, IFIP — The International Federation for Information Processing, 978-1-4757-6530-4. ⟨10.1007/978-0-387-35597-9_40⟩. ⟨lirmm-00268487⟩
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