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Imperfect Return Path Effects on RLCG Model of Single and Coupled Interconnects: Propagation Delay, Rise Time and Crosstalk Prediction

Abstract : If we take a look at the latest ITRS 2001 edition[1], we will realize the number and difficulties of technical challenges the semiconductor industry must solve. Traditional scaling which has been at the basis of the semi conductor industry during these last three decades is indeed beginning to show limits in CMOS planar process as well as in connecting each elementary active device. The new edition roadmap highlight the need of modeling lithography technology, deposition and etch variation across a wafer, and simulating gate stack and ultra shallow dopant distributions, and junctions. Extensive studies are also required in high frequency circuit modeling. Efficient simulation of full chip interconnect delay is also needed as well as 3D transmission line interconnect simulation.
Keywords : Predictive models
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Conference papers
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00268510
Contributor : Christine Carvalho de Matos <>
Submitted on : Tuesday, April 1, 2008 - 9:27:35 AM
Last modification on : Wednesday, June 24, 2020 - 4:18:36 PM

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Jean-François Legier, Erick Paleczny, K. El Bouazzati, Denis Deschacht, Fabrice Huret. Imperfect Return Path Effects on RLCG Model of Single and Coupled Interconnects: Propagation Delay, Rise Time and Crosstalk Prediction. SPI: Signal Propagation on Interconnects, Jun 2002, Pisa, Italy. pp.19-21, ⟨10.1109/SPI.2002.258279⟩. ⟨lirmm-00268510⟩

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