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Very Low Power High Temperature Stability Bandgap Reference Voltage

Abstract : Due to the expansion of the portable applications and the battery operated products, great interest is given for design methodology for low consumption. When designing a process sensitive devices such as bandgap reference circuits (BGR), a perfect match between the simulation and the measurement on silicon have to be ensured. We present in this paper a very low current high temperature stability BiCMOS BGR design. A low current dedicated process characterization procedure is explained. The micro-power BGR design methodology is presented.
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Submitted on : Monday, September 23, 2019 - 6:45:55 PM
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  • HAL Id : lirmm-00268525, version 1



Wenceslas Rahajandraibe, Daniel Auvergne, Christian Dufaza, Bruno Cialdella, Bernard Majoux, et al.. Very Low Power High Temperature Stability Bandgap Reference Voltage. ESSCIRC: European Solid-State Circuits Conference, Sep 2002, Firenze, Italy. pp.727-734. ⟨lirmm-00268525⟩



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