Very Low Power High Temperature Stability Bandgap Reference Voltage - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2002

Very Low Power High Temperature Stability Bandgap Reference Voltage

Abstract

Due to the expansion of the portable applications and the battery operated products, great interest is given for design methodology for low consumption. When designing a process sensitive devices such as bandgap reference circuits (BGR), a perfect match between the simulation and the measurement on silicon have to be ensured. We present in this paper a very low current high temperature stability BiCMOS BGR design. A low current dedicated process characterization procedure is explained. The micro-power BGR design methodology is presented.
Fichier principal
Vignette du fichier
CP.17.pdf (683.92 Ko) Télécharger le fichier
Origin : Publisher files allowed on an open archive
Loading...

Dates and versions

lirmm-00268525 , version 1 (23-09-2019)

Identifiers

  • HAL Id : lirmm-00268525 , version 1

Cite

Wenceslas Rahajandraibe, Daniel Auvergne, Christian Dufaza, Bruno Cialdella, Bernard Majoux, et al.. Very Low Power High Temperature Stability Bandgap Reference Voltage. ESSCIRC: European Solid-State Circuits Conference, Sep 2002, Firenze, Italy. pp.727-734. ⟨lirmm-00268525⟩
51 View
82 Download

Share

Gmail Facebook X LinkedIn More