Non-Linear and Non-Split Transistor MOS Model for Gate Oxyde Short - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Conference Papers Year : 2002

Non-Linear and Non-Split Transistor MOS Model for Gate Oxyde Short

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Micro and nanotechnologies/Microelectronics

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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00269333

Submitted on : Wednesday, April 2, 2008-4:46:02 PM

Last modification on : Friday, March 24, 2023-2:52:50 PM

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lirmm-00269333 , version 1 (02-04-2008)

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  • HAL Id : lirmm-00269333 , version 1

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Michel Renovell, Jean-Marc J.-M. Galliere, Florence Azaïs, Yves Bertrand. Non-Linear and Non-Split Transistor MOS Model for Gate Oxyde Short. DBT: Defect Based Testing, Apr 2002, Monterey, CA, United States. pp.11-16. ⟨lirmm-00269333⟩

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