Delay Testing of MOS Transistor with Gate Oxide Short - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Conference Papers Year : 2003

Delay Testing of MOS Transistor with Gate Oxide Short

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Computer Science [cs]

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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00269641

Submitted on : Thursday, April 3, 2008-8:22:05 AM

Last modification on : Friday, March 24, 2023-2:52:50 PM

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lirmm-00269641 , version 1 (03-04-2008)

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  • HAL Id : lirmm-00269641 , version 1

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Michel Renovell, Jean-Marc J.-M. Galliere, Florence Azaïs, Yves Bertrand. Delay Testing of MOS Transistor with Gate Oxide Short. ATS: Asian Test Symposium, Nov 2003, Xian, China. pp.168-173. ⟨lirmm-00269641⟩

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