Transit Time Extraction Method for ESD Protection Diodes Model

Abstract : Nowadays, even though ESD protection diodes are clearly the most used protection devices in I/O cells their behavior is a major problem during a very fast transient. In fact the forward and reverse recovery effects lead respectively to a high over voltage during their triggering and a sustained voltage during the turn-off. Those phenomena depend on the time needed by minority carriers to flow or evacuate the neutral region (the well). This time, which is the transit time of the diode, is also a key parameter of the diode transient behavior. In this presentation a simple extraction method is described in order to extract the transit time of an ESD protection diode. Then, the impact of the junction shape on the transit time will be demonstrated.
Type de document :
Communication dans un congrès
IEW'08: International ESD Workshop, Port d'Albret, France. 2008
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00337884
Contributeur : Florence Azais <>
Soumis le : lundi 10 novembre 2008 - 09:58:02
Dernière modification le : jeudi 24 mai 2018 - 15:59:24

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  • HAL Id : lirmm-00337884, version 1

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Jean-Robert Manouvrier, Pascal Fonteneau, Charles-Alexandre Legrand, Pascal Nouet, Florence Azaïs. Transit Time Extraction Method for ESD Protection Diodes Model. IEW'08: International ESD Workshop, Port d'Albret, France. 2008. 〈lirmm-00337884〉

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