On the Use of Magnetic RAMs in Field Programmable Gate Arrays

Abstract : This paper describes the integration of field-induced magnetic switching (FIMS) and thermally assisted switching (TAS) magnetic random access memories in FPGA design. The nonvolatility of the latter is achieved through the use of magnetic tunneling junctions (MTJs) in the MRAM cell. A thermally assisted switching scheme helps to reduce power consumption during write operation in comparison to the writing scheme in the FIMS-MTJ device. Moreover, the nonvolatility of such a design based on either an FIMS or a TAS writing scheme should reduce both power consumption and configuration time required at each power up of the circuit in comparison to classical SRAM-based FPGAs. A real-time reconfigurable (RTR) micro-FPGA using FIMS-MRAM or TAS-MRAM allows dynamic reconfiguration mechanisms, while featuring simple design architecture.
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International Journal of Reconfigurable Computing, Hindawi Publishing Corporation, 2008, Q3, pp.ID 723950. 〈http://www.hindawi.com/journals/ijrc/〉. 〈10.1155/2008/723950〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00352417
Contributeur : Martine Peridier <>
Soumis le : mardi 13 janvier 2009 - 10:18:09
Dernière modification le : mardi 26 juin 2018 - 01:18:34

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Yoann Guillemenet, Lionel Torres, Gilles Sassatelli, Nicolas Bruchon. On the Use of Magnetic RAMs in Field Programmable Gate Arrays. International Journal of Reconfigurable Computing, Hindawi Publishing Corporation, 2008, Q3, pp.ID 723950. 〈http://www.hindawi.com/journals/ijrc/〉. 〈10.1155/2008/723950〉. 〈lirmm-00352417〉

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