Influence of Gate Oxide Short Defects on the Stability of Minimal Sized SRAM Core-Cell by Applying Non-Split Models - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2009
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lirmm-00370798 , version 1 (25-03-2009)

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  • HAL Id : lirmm-00370798 , version 1

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Jean-Marc J.-M. Galliere, Florence Azaïs, Michel Renovell, Luigi Dilillo. Influence of Gate Oxide Short Defects on the Stability of Minimal Sized SRAM Core-Cell by Applying Non-Split Models. DTIS: Design and Technology of Integrated Systems in Nanoscale Era, 2009, Cairo, Egypt. pp.225-229. ⟨lirmm-00370798⟩
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