Influence of Gate Oxide Short Defects on the Stability of Minimal Sized SRAM Core-Cell by Applying Non-Split Models - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Conference Papers Year : 2009

Influence of Gate Oxide Short Defects on the Stability of Minimal Sized SRAM Core-Cell by Applying Non-Split Models

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Micro and nanotechnologies/Microelectronics

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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00370798

Submitted on : Wednesday, March 25, 2009-2:09:12 PM

Last modification on : Friday, March 24, 2023-2:52:51 PM

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lirmm-00370798 , version 1 (25-03-2009)

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  • HAL Id : lirmm-00370798 , version 1

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Jean-Marc J.-M. Galliere, Florence Azaïs, Michel Renovell, Luigi Dilillo. Influence of Gate Oxide Short Defects on the Stability of Minimal Sized SRAM Core-Cell by Applying Non-Split Models. DTIS: Design and Technology of Integrated Systems in Nanoscale Era, 2009, Cairo, Egypt. pp.225-229. ⟨lirmm-00370798⟩

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