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A Model for Resistive Open Recursivity in CMOS Random Logic

Abstract : This paper analyzes the electrical behaviour of resistive opens as a function of its unpredictable resistance. It is demonstrated that the electrical behaviour depends on the value of the open resistance. It is also shown that, due to the memory effect detection of the open by a given vector Ti depends on all the vectors that have been applied to the circuit before Ti. An electrical analysis of this memory effect is presented.
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00381465
Contributor : Mariane Comte <>
Submitted on : Tuesday, May 5, 2009 - 4:00:24 PM
Last modification on : Saturday, September 21, 2019 - 3:43:01 PM

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  • HAL Id : lirmm-00381465, version 1

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Michel Renovell, Mariane Comte, Nicolas Houarche, Ilia Polian, Piet Engelke, et al.. A Model for Resistive Open Recursivity in CMOS Random Logic. EWDTS: East-West Design & Test Symposium, Oct 2008, Lviv, Ukraine. pp.21-24. ⟨lirmm-00381465⟩

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