A Model for Resistive Open Recursivity in CMOS Random Logic

Abstract : This paper analyzes the electrical behaviour of resistive opens as a function of its unpredictable resistance. It is demonstrated that the electrical behaviour depends on the value of the open resistance. It is also shown that, due to the memory effect detection of the open by a given vector Ti depends on all the vectors that have been applied to the circuit before Ti. An electrical analysis of this memory effect is presented.
Type de document :
Communication dans un congrès
EWDTS'08: IEEE East-West Design & Test Symposium, Oct 2008, Ukraine. pp.21-24, 2008, 〈http://ewdtest.com/conf/〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00381465
Contributeur : Mariane Comte <>
Soumis le : mardi 5 mai 2009 - 16:00:24
Dernière modification le : jeudi 11 janvier 2018 - 06:27:19

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  • HAL Id : lirmm-00381465, version 1

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Michel Renovell, Mariane Comte, Nicolas Houarche, Ilia Polian, Piet Engelke, et al.. A Model for Resistive Open Recursivity in CMOS Random Logic. EWDTS'08: IEEE East-West Design & Test Symposium, Oct 2008, Ukraine. pp.21-24, 2008, 〈http://ewdtest.com/conf/〉. 〈lirmm-00381465〉

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