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Poster communications

SRAM Core-cell Quality Metrics

Abstract : In the context of test and reliability of SRAM memories, it is necessary to express the quality of a single core-cell quantitatively. This measure will be called quality metric (QM). QMs are specially needed to analyze impact of the voltage threshold variability on the SRAM core-cell in recent nanotechnologies. In this paper we have collected SRAM core-cell QMs proposed in recent literature.
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Poster communications
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00434962
Contributor : Arnaud Virazel <>
Submitted on : Monday, November 23, 2009 - 2:50:33 PM
Last modification on : Wednesday, August 28, 2019 - 3:46:02 PM

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  • HAL Id : lirmm-00434962, version 1

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Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, et al.. SRAM Core-cell Quality Metrics. GDR SOC SIP, France. 2009. ⟨lirmm-00434962⟩

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