SRAM Core-cell Quality Metrics

Abstract : In the context of test and reliability of SRAM memories, it is necessary to express the quality of a single core-cell quantitatively. This measure will be called quality metric (QM). QMs are specially needed to analyze impact of the voltage threshold variability on the SRAM core-cell in recent nanotechnologies. In this paper we have collected SRAM core-cell QMs proposed in recent literature.
Type de document :
Poster
GDR SOC SIP, France. 2009
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00434962
Contributeur : Arnaud Virazel <>
Soumis le : lundi 23 novembre 2009 - 14:50:33
Dernière modification le : jeudi 24 mai 2018 - 15:59:24

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  • HAL Id : lirmm-00434962, version 1

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Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, et al.. SRAM Core-cell Quality Metrics. GDR SOC SIP, France. 2009. 〈lirmm-00434962〉

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