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Conference Poster Year : 2009

SRAM Core-cell Quality Metrics

Abstract

In the context of test and reliability of SRAM memories, it is necessary to express the quality of a single core-cell quantitatively. This measure will be called quality metric (QM). QMs are specially needed to analyze impact of the voltage threshold variability on the SRAM core-cell in recent nanotechnologies. In this paper we have collected SRAM core-cell QMs proposed in recent literature.
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Dates and versions

lirmm-00434962 , version 1 (23-11-2009)

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  • HAL Id : lirmm-00434962 , version 1

Cite

Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, et al.. SRAM Core-cell Quality Metrics. GDR SOC SIP, France. 2009. ⟨lirmm-00434962⟩
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