Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Journal Articles Microelectronics Reliability Year : 2009

Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain

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Micro and nanotechnologies/Microelectronics

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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00435866

Submitted on : Wednesday, November 25, 2009-10:32:19 AM

Last modification on : Wednesday, August 2, 2023-4:40:25 PM

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lirmm-00435866 , version 1 (25-11-2009)

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Jean-Robert Manouvrier, Pascal Fonteneau, Charles-Alexandre Legrand, Pascal Nouet, Florence Azaïs. Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain. Microelectronics Reliability, 2009, 49 (12), pp.1424-1432. ⟨10.1016/j.microrel.2009.06.056⟩. ⟨lirmm-00435866⟩

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