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Analysis of Resistive-Bridging Defects in SRAM Core-Cells: a Comparative Study from 90nm down to 40nm Technology Nodes

Abstract : In this paper, we present a comparative study on the effects of resistive-bridging defects in the SRAM core-cells, considering different technology nodes. In particular, we analyze industrial designs of SRAM core-cell at the following technology nodes: 90nm, 65nm and 40nm. We have performed an extensive number of simulations, varying the resistive value of defects, the power supply voltage, the memory size and the temperature. Experimental results show malfunctions not only within the defective core-cell, but also in other core-cells (defect-free) of the memory array.
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00493236
Contributor : Martine Peridier <>
Submitted on : Friday, June 18, 2010 - 11:32:31 AM
Last modification on : Wednesday, August 28, 2019 - 3:46:02 PM
Long-term archiving on: : Monday, September 20, 2010 - 5:45:02 PM

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Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, et al.. Analysis of Resistive-Bridging Defects in SRAM Core-Cells: a Comparative Study from 90nm down to 40nm Technology Nodes. ETS: European Test Symposium, May 2010, Prague, Czech Republic. pp.132-137. ⟨lirmm-00493236⟩

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