Analysis of Resistive-Bridging Defects in SRAM Core-Cells: a Comparative Study from 90nm down to 40nm Technology Nodes - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2010

Analysis of Resistive-Bridging Defects in SRAM Core-Cells: a Comparative Study from 90nm down to 40nm Technology Nodes

Abstract

In this paper, we present a comparative study on the effects of resistive-bridging defects in the SRAM core-cells, considering different technology nodes. In particular, we analyze industrial designs of SRAM core-cell at the following technology nodes: 90nm, 65nm and 40nm. We have performed an extensive number of simulations, varying the resistive value of defects, the power supply voltage, the memory size and the temperature. Experimental results show malfunctions not only within the defective core-cell, but also in other core-cells (defect-free) of the memory array.
Fichier principal
Vignette du fichier
ets10_09_1.pdf (1.28 Mo) Télécharger le fichier
Origin Files produced by the author(s)
Loading...

Dates and versions

lirmm-00493236 , version 1 (18-06-2010)

Identifiers

  • HAL Id : lirmm-00493236 , version 1

Cite

Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, et al.. Analysis of Resistive-Bridging Defects in SRAM Core-Cells: a Comparative Study from 90nm down to 40nm Technology Nodes. ETS: European Test Symposium, May 2010, Prague, Czech Republic. pp.132-137. ⟨lirmm-00493236⟩
126 View
570 Download

Share

Gmail Mastodon Facebook X LinkedIn More