A Memory Fault Simulator for Radiation-Induced Effects in SRAMs - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2010
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lirmm-00545102 , version 1 (09-12-2010)

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  • HAL Id : lirmm-00545102 , version 1

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Paolo Rech, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, et al.. A Memory Fault Simulator for Radiation-Induced Effects in SRAMs. ATS: Asian Test Symposium, 2010, Shanghai, China. pp.100-105. ⟨lirmm-00545102⟩
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