A Memory Fault Simulator for Radiation-Induced Effects in SRAMs - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Conference Papers Year : 2010

A Memory Fault Simulator for Radiation-Induced Effects in SRAMs

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Micro and nanotechnologies/Microelectronics

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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00545102

Submitted on : Thursday, December 9, 2010-3:53:40 PM

Last modification on : Friday, March 24, 2023-2:52:53 PM

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lirmm-00545102 , version 1 (09-12-2010)

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  • HAL Id : lirmm-00545102 , version 1

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Paolo Rech, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, et al.. A Memory Fault Simulator for Radiation-Induced Effects in SRAMs. ATS: Asian Test Symposium, 2010, Shanghai, China. pp.100-105. ⟨lirmm-00545102⟩

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