Skip to Main content Skip to Navigation
Journal articles

Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs

Abstract : 50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-junction, IGBT and SiC) from different vendors. A strong dependence on the device type and orientation is observed.
Document type :
Journal articles
Complete list of metadatas

https://hal-lirmm.ccsd.cnrs.fr/lirmm-00805039
Contributor : Luigi Dilillo <>
Submitted on : Tuesday, March 26, 2013 - 7:22:31 PM
Last modification on : Thursday, January 23, 2020 - 4:28:09 PM

Identifiers

Collections

Citation

Alessio Griffoni, Jeroen van Duivenbode, Dimitri Linten, Eddy Simoen, Paolo Rech, et al.. Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (4), pp.866-871. ⟨10.1109/TNS.2011.2180924⟩. ⟨lirmm-00805039⟩

Share

Metrics

Record views

412