Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs

Abstract : 50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-junction, IGBT and SiC) from different vendors. A strong dependence on the device type and orientation is observed.
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Article dans une revue
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (4), pp.866-871. 〈10.1109/TNS.2011.2180924〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00805039
Contributeur : Luigi Dilillo <>
Soumis le : mardi 26 mars 2013 - 19:22:31
Dernière modification le : jeudi 11 janvier 2018 - 06:27:29

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Alessio Griffoni, Jeroen Van Duivenbode, Dimitri Linten, Eddy Simoen, Paolo Rech, et al.. Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (4), pp.866-871. 〈10.1109/TNS.2011.2180924〉. 〈lirmm-00805039〉

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