Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Journal Articles IEEE Transactions on Nuclear Science Year : 2012

Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs

Abstract

50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-junction, IGBT and SiC) from different vendors. A strong dependence on the device type and orientation is observed.

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Electronics

Luigi Dilillo  : Connect in order to contact the contributor

https://hal-lirmm.ccsd.cnrs.fr/lirmm-00805039

Submitted on : Tuesday, March 26, 2013-7:22:31 PM

Last modification on : Tuesday, January 23, 2024-12:28:53 PM

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lirmm-00805039 , version 1 (26-03-2013)

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Alessio Griffoni, Jeroen van Duivenbode, Dimitri Linten, Eddy Simoen, Paolo Rech, et al.. Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs. IEEE Transactions on Nuclear Science, 2012, 59 (4), pp.866-871. ⟨10.1109/TNS.2011.2180924⟩. ⟨lirmm-00805039⟩

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