Magnetic memory (MRAM), a new area for 2D and 3D SoC/SiP design - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2011

Magnetic memory (MRAM), a new area for 2D and 3D SoC/SiP design

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lirmm-00809835 , version 1 (09-04-2013)

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  • HAL Id : lirmm-00809835 , version 1

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Lionel Torres, Weisheng Zhao. Magnetic memory (MRAM), a new area for 2D and 3D SoC/SiP design. ACM Great Lakes Symposium on VLSI 2011, Switzerland. ⟨lirmm-00809835⟩
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