Magnetic memory (MRAM), a new area for 2D and 3D SoC/SiP design - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Conference Papers Year : 2011

Magnetic memory (MRAM), a new area for 2D and 3D SoC/SiP design

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Micro and nanotechnologies/Microelectronics

Lionel Torres  : Connect in order to contact the contributor

https://hal-lirmm.ccsd.cnrs.fr/lirmm-00809835

Submitted on : Tuesday, April 9, 2013-9:20:21 PM

Last modification on : Friday, March 24, 2023-2:52:57 PM

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lirmm-00809835 , version 1 (09-04-2013)

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  • HAL Id : lirmm-00809835 , version 1

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Lionel Torres, Weisheng Zhao. Magnetic memory (MRAM), a new area for 2D and 3D SoC/SiP design. ACM Great Lakes Symposium on VLSI 2011, Switzerland. ⟨lirmm-00809835⟩

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CNRS SYSMIC LIRMM UNIV-PARIS-SACLAY LIRMM_MIC MIC MIPS UNIV-MONTPELLIER
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