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A 3D IC BIST for pre-bond test of TSVs using Ring Oscillators

Abstract : 3D stacked integrated circuits based on Through Silicon Vias (TSV) are promising with their high performances and small form factor. However, these circuits present many test issues, especially for TSVs. In this paper we propose a novel Built-In-Self-Test (BIST) architecture for pre-bond testing of TSVs in 3D stacked integrated circuits. The main idea is to measure the variation of TSVs capacitances in order to detect defective TSVs. The BIST architecture is based on ring oscillators, frequencies of which depend on TSVs capacitances. The proposed BIST is integrated within the JTAG standard. This paper presents spice simulation results and logic synthesis results of the proposed TSV ring oscillator structure using a 65 nm CMOS technology, including 10 μm diameter TSV middle technology. Due to local process variations, the proposed test architecture is limited in accuracy; it detects only large capacitive faults on TSVs.
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00838524
Contributor : Marie-Lise Flottes <>
Submitted on : Tuesday, June 25, 2013 - 5:34:29 PM
Last modification on : Tuesday, September 1, 2020 - 11:32:04 AM
Long-term archiving on: : Wednesday, April 5, 2017 - 4:37:45 AM

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Yassine Fkih, Pascal Vivet, Giorgio Di Natale, Marie-Lise Flottes, Bruno Rouzeyre. A 3D IC BIST for pre-bond test of TSVs using Ring Oscillators. NEWCAS: New Circuits and Systems, Jun 2013, Paris, France. pp.001-004. ⟨lirmm-00838524⟩

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