F. Wrobel, J. Palau, M. Calvet, O. Bersillon, and H. Duarte, Simulation of nucleon-induced nuclear reactions in a simplified SRAM structure: scaling effects on SEU and MBU cross sections, IEEE Transactions on Nuclear Science, vol.48, issue.6, p.1946, 1952.
DOI : 10.1109/23.983155

G. Gasiot, D. Giot, and P. Roche, Multiple Cell Upsets as the Key Contribution to the Total SER of 65 nm CMOS SRAMs and Its IE E E Trans, Nucl. Sci, vol.54, issue.6, p.24682473, 2007.

D. Radaelli, H. Puchner, S. Wong, and S. Daniel, Investigation of multibit upsets in a 150 nm technolo IE E E Trans, Nucl. Sci, vol.52, issue.6, p.24332437, 2005.

A. Hands, P. Morris, K. Ryden, and C. , Dyer Large-Scale Multiple Cell Upsets in 90 nm Commercial SRAMs During Neutron Irradia IE E E Trans, Nucl. Sci, vol.59, issue.6, p.28242830, 2012.

D. Niggemeyer and M. Redeker, Integration of non, Proc. IE E E Int. Test Conf, pp.53-62, 1998.