Multi-Level Ionizing-Induced Transient Fault Simulator

Feng Lu 1 Giorgio Di Natale 1 Marie-Lise Flottes 1 Bruno Rouzeyre 1
1 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Abstract : This paper presents a multi-level fault simulator for digital circuits. Single and multiple transient phenomena are examined at low level in order to model accurately single/multiple event transients at logic level. Multi-level simulation is used for precision of electrical modeling and the conciseness of the coarse grain gate-level modeling. This simulator handles natural and maliciously-induced transient faults, allowing evaluating the robustness of dependable circuits as well as countermeasures against ionizing-induced fault attacks on secure circuits.
Type de document :
Article dans une revue
Information Security Journal: A Global Perspective, Taylor & Francis, 2014, 22 (5-6), pp.251-264. 〈http://www.tandfonline.com/doi/abs/10.1080/19393555.2014.891280#.VEEP7tTLc4l〉. 〈10.1080/19393555.2014.891280〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01075393
Contributeur : Giorgio Di Natale <>
Soumis le : vendredi 17 octobre 2014 - 14:54:29
Dernière modification le : mardi 23 octobre 2018 - 10:46:02

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Feng Lu, Giorgio Di Natale, Marie-Lise Flottes, Bruno Rouzeyre. Multi-Level Ionizing-Induced Transient Fault Simulator. Information Security Journal: A Global Perspective, Taylor & Francis, 2014, 22 (5-6), pp.251-264. 〈http://www.tandfonline.com/doi/abs/10.1080/19393555.2014.891280#.VEEP7tTLc4l〉. 〈10.1080/19393555.2014.891280〉. 〈lirmm-01075393〉

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