Multi-Level Ionizing-Induced Transient Fault Simulator

Feng Lu 1 Giorgio Di Natale 1 Marie-Lise Flottes 1 Bruno Rouzeyre 1
1 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Abstract : This paper presents a multi-level fault simulator for digital circuits. Single and multiple transient phenomena are examined at low level in order to model accurately single/multiple event transients at logic level. Multi-level simulation is used for precision of electrical modeling and the conciseness of the coarse grain gate-level modeling. This simulator handles natural and maliciously-induced transient faults, allowing evaluating the robustness of dependable circuits as well as countermeasures against ionizing-induced fault attacks on secure circuits.
Complete list of metadatas

https://hal-lirmm.ccsd.cnrs.fr/lirmm-01075393
Contributor : Giorgio Di Natale <>
Submitted on : Friday, October 17, 2014 - 2:54:29 PM
Last modification on : Thursday, February 7, 2019 - 2:48:44 PM

Identifiers

Collections

Citation

Feng Lu, Giorgio Di Natale, Marie-Lise Flottes, Bruno Rouzeyre. Multi-Level Ionizing-Induced Transient Fault Simulator. Information Security Journal: A Global Perspective, Taylor & Francis, 2014, 22 (5-6), pp.251-264. ⟨10.1080/19393555.2014.891280⟩. ⟨lirmm-01075393⟩

Share

Metrics

Record views

157