Gate voltage contribution to neutron-induced SEB of Trench Gate Fieldstop IGBT - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2013

Gate voltage contribution to neutron-induced SEB of Trench Gate Fieldstop IGBT

Abstract

Single Event Burnout and Gate Rupture are catastrophic failures due to cosmic rays that can be occurring simultaneously. It is shown that biased negatively the gate leads to a substantial increase of SEB cross section.
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Dates and versions

lirmm-01237617 , version 1 (03-12-2015)

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Lionel Foro, Antoine Touboul, Frédéric Wrobel, Paolo Rech, Luigi Dilillo, et al.. Gate voltage contribution to neutron-induced SEB of Trench Gate Fieldstop IGBT. RADECS: Radiation and Its Effects on Components and Systems, Sep 2013, Oxford, United Kingdom. ⟨10.1109/RADECS.2013.6937428⟩. ⟨lirmm-01237617⟩
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