Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT

Single Event Burnout and Gate Rupture are catastrophic failures due to cosmic rays that can occur simultaneously. It is shown that negatively biasing the gate leads to a substantial increase of SEB cross section in particular when the collector voltage is closer to the safe operating area of the device.

Keywords

Atmospheric neutrons Single Event Burnout (SEB) Cross section Single Event Gate Rupture (SEGR) gate oxide breakdown trench gate fieldstop Insulated Gate Bipolar Transistor (IGBT)

Domains

Electronics Physics [physics]

Luigi Dilillo : Connect in order to contact the contributor

https://hal-lirmm.ccsd.cnrs.fr/lirmm-01237646

Submitted on : Thursday, December 3, 2015-3:31:30 PM

Last modification on : Tuesday, January 23, 2024-12:28:53 PM

Dates and versions

lirmm-01237646 , version 1 (03-12-2015)

Identifiers

HAL Id : lirmm-01237646 , version 1
DOI : 10.1109/TNS.2014.2332813

Cite

Lionel Foro, Antoine Touboul, Alain Michez, Frédéric Wrobel, Paolo Rech, et al.. Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT. IEEE Transactions on Nuclear Science, 2014, 61 (4), pp.1739-1746. ⟨10.1109/TNS.2014.2332813⟩. ⟨lirmm-01237646⟩

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