Radiation Study of a 4Mbit Ferroelectric RAM for Space Applications - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2014

Radiation Study of a 4Mbit Ferroelectric RAM for Space Applications

Helmut Puchner

Abstract

We present a Heavy Ion radiation study for a ultra low power non volatile 4Mbit ferroelectric memory(FRAM) for space applications manufactured on a 130nm domestic CMOS technology node. The radiation summary includes SEU data from Heavy Ions static as well as dynamic stress tests. The FRAM device meets the space level upset criteria for static device stress, but requires additional system mitigation for dynamic device stress.
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Dates and versions

lirmm-01297441 , version 1 (04-04-2016)

Identifiers

  • HAL Id : lirmm-01297441 , version 1

Cite

Helmut Puchner, Georgios Tsiligiannis, Luigi Dilillo. Radiation Study of a 4Mbit Ferroelectric RAM for Space Applications. SEE: Single Event Effects, Aeroflex Corporation, the Aerospace Corporation, Brigham Young University, Lockheed Martin, the NASA Electronic Parts and Packaging Program, the Naval Research Laboratory, Sandia National Laboratories, and Vanderbilt University, May 2014, San Diego, United States. ⟨lirmm-01297441⟩
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