Radiation Study of a 4Mbit Ferroelectric RAM for Space Applications

Helmut Puchner Georgios Tsiligiannis 1 Luigi Dilillo 1
1 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Abstract : We present a Heavy Ion radiation study for a ultra low power non volatile 4Mbit ferroelectric memory(FRAM) for space applications manufactured on a 130nm domestic CMOS technology node. The radiation summary includes SEU data from Heavy Ions static as well as dynamic stress tests. The FRAM device meets the space level upset criteria for static device stress, but requires additional system mitigation for dynamic device stress.
Document type :
Conference papers
Complete list of metadatas

https://hal-lirmm.ccsd.cnrs.fr/lirmm-01297441
Contributor : Luigi Dilillo <>
Submitted on : Monday, April 4, 2016 - 12:48:40 PM
Last modification on : Monday, July 1, 2019 - 10:28:03 AM

Identifiers

  • HAL Id : lirmm-01297441, version 1

Collections

Citation

Helmut Puchner, Georgios Tsiligiannis, Luigi Dilillo. Radiation Study of a 4Mbit Ferroelectric RAM for Space Applications. SEE: Single Event Effects, Aeroflex Corporation, the Aerospace Corporation, Brigham Young University, Lockheed Martin, the NASA Electronic Parts and Packaging Program, the Naval Research Laboratory, Sandia National Laboratories, and Vanderbilt University, May 2014, San Diego, United States. ⟨lirmm-01297441⟩

Share

Metrics

Record views

170