Radiation Study of a 4Mbit Ferroelectric RAM for Space Applications

Helmut Puchner Georgios Tsiligiannis 1 Luigi Dilillo 1
1 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Abstract : We present a Heavy Ion radiation study for a ultra low power non volatile 4Mbit ferroelectric memory(FRAM) for space applications manufactured on a 130nm domestic CMOS technology node. The radiation summary includes SEU data from Heavy Ions static as well as dynamic stress tests. The FRAM device meets the space level upset criteria for static device stress, but requires additional system mitigation for dynamic device stress.
Type de document :
Communication dans un congrès
SEE: Single Event Effects, May 2014, San Diego, United States. 2014, 〈http://radhome.gsfc.nasa.gov/radhome/see_mapld/2014/index.cfm〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01297441
Contributeur : Luigi Dilillo <>
Soumis le : lundi 4 avril 2016 - 12:48:40
Dernière modification le : jeudi 28 juin 2018 - 18:44:05

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  • HAL Id : lirmm-01297441, version 1

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Helmut Puchner, Georgios Tsiligiannis, Luigi Dilillo. Radiation Study of a 4Mbit Ferroelectric RAM for Space Applications. SEE: Single Event Effects, May 2014, San Diego, United States. 2014, 〈http://radhome.gsfc.nasa.gov/radhome/see_mapld/2014/index.cfm〉. 〈lirmm-01297441〉

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