Comparative study of Bulk, FDSOI and FinFET technologies in presence of a resistive short defect - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Conference Papers Year : 2016

Comparative study of Bulk, FDSOI and FinFET technologies in presence of a resistive short defect

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lirmm-01374300 , version 1 (30-09-2016)

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Amit Karel, Mariane Comte, Jean-Marc J.-M. Galliere, Florence Azaïs, Michel Renovell. Comparative study of Bulk, FDSOI and FinFET technologies in presence of a resistive short defect. LATS: Latin-American Test Symposium, Mar 2016, Foz do Iguacu, Brazil. pp.129-134, ⟨10.1109/LATW.2016.7483352⟩. ⟨lirmm-01374300⟩
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