T. N. Kim, D. Austin, and . Baauw, Leakage current: Moore's law meets static power, Computer, vol.36, pp.68-75, 2003.

D. S. Wolf, R. A. Awschalom, and . Buhrman, Spintronics: A Spin-Based Electronics Vision for the Future, Science, vol.294, issue.5546, pp.1488-1495, 2001.
DOI : 10.1126/science.1065389

G. W. Zhao and . Prenat, Spintronics-Based Computing, 2015.
DOI : 10.1007/978-3-319-15180-9

C. Chappert, A. Fert, and F. N. Van-dau, The emergence of spin electronics in data storage, Nature Materials, vol.96, issue.5, pp.813-823, 2007.
DOI : 10.1038/nmat2024

H. S. Wong and S. Salahuddin, Memory leads the way to better computing, Nature Nanotechnology, vol.10, issue.3, pp.191-195, 2015.
DOI : 10.1038/nature12502

Y. Huai, Spin-transfer torque MRAM (STT-MRAM): challenges and prospects, AAPPS Bulletin, vol.18, pp.33-40, 2008.

D. E. Chen, A. Apalkov, . Driskill-smith, D. Khvalkovskiy, K. Lottis et al., Progress and Prospects of Spin Transfer Torque Random Access Memory, IEEE Transactions on Magnetics, vol.48, issue.11, pp.3025-3030, 2012.
DOI : 10.1109/TMAG.2012.2198451

. J. Slonczewski, Current-driven excitation of magnetic multilayers, Journal of Magnetism and Magnetic Materials, vol.159, issue.1-2, pp.1-7, 1996.
DOI : 10.1016/0304-8853(96)00062-5

J. S. Ikeda, Y. M. Hayakawa, and . Lee, Magnetic Tunnel Junctions for Spintronic Memories and Beyond, IEEE Transactions on Electron Devices, vol.54, issue.5, pp.991-1002, 2007.
DOI : 10.1109/TED.2007.894617

K. S. Ikeda, H. Miura, and . Yamamoto, A perpendicular-anisotropy CoFeB???MgO magnetic tunnel junction, Nature Materials, vol.92, issue.9, pp.721-724, 2010.
DOI : 10.1038/nmat2804

URL : http://citeseerx.ist.psu.edu/viewdoc/summary?doi=

Y. W. Zhao, T. Zhang, and . Devolder, Failure and reliability analysis of STT-MRAM, Microelectronics Reliability, vol.52, issue.9-10, pp.1848-1852, 2012.
DOI : 10.1016/j.microrel.2012.06.035

T. W. Zhao, Y. Devolder, and . Lakys, Design considerations and strategies for high-reliable STT-MRAM, Microelectronics Reliability, vol.51, issue.9-11, pp.1454-1458, 2011.
DOI : 10.1016/j.microrel.2011.07.001

X. W. Zhao, B. Zhao, and . Zhang, Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy, Materials, vol.9, issue.1, p.41
DOI : 10.3390/ma9010041

W. Kang, L. Y. Zhang, and W. S. Zhao, Yield and Reliability Improvement Techniques for Emerging Nonvolatile STT-MRAM, IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol.5, issue.1, pp.28-39, 2015.
DOI : 10.1109/JETCAS.2014.2374291

S. Amara-dababi, R. C. Sousa, and M. Chshiev, Charge trapping-detrapping mechanism of barrier breakdown in MgO magnetic tunnel junctions, Applied Physics Letters, vol.99, issue.8, pp.99-083501, 2011.
DOI : 10.1063/1.3615654

H. N. Shimomura, S. Yoda, and . Ikegawa, Switching Current Fluctuation and Repeatability for MRAM With Propeller-Shape MTJ, IEEE Transactions on Magnetics, vol.42, issue.10, pp.2757-2759, 2006.
DOI : 10.1109/TMAG.2006.878865

N. N. Mojumder, D. W. Abraham, and K. Roy, Magnonic Spin-Transfer Torque MRAM With Low Power, High Speed, and Error-Free Switching, IEEE Transactions on Magnetics, vol.48, issue.6, pp.2016-2024, 2012.
DOI : 10.1109/TMAG.2011.2179982

URL : http://arxiv.org/abs/1105.5473

Y. Y. Wang, E. Y. Zhang, and . Deng, Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses, Microelectronics Reliability, pp.54-1774, 2014.
DOI : 10.1016/j.microrel.2014.07.019

URL : https://hal.archives-ouvertes.fr/hal-01216414