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Memory cell with volatile and non-volatile storage

Yoann Guillemenet 1 Lionel Torres 1
1 ADAC - ADAptive Computing
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Abstract : The invention concerns a memory device comprising at least one memory cell comprising: first and second pairs of cross-coupled transistors; and a first resistance switching element (202) coupled between a first supply voltage (VDD, GND) and a first transistor of said first pair of transistors and programmed to have one of first and second resistances; and control circuitry adapted to store a data value (DNV) at said first and second storage nodes by coupling said first storage node to said second supply voltage (VDD, GND), the data value being determined by the programmed resistance of the first resistance switching element.
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01687795
Contributor : Caroline Lebrun <>
Submitted on : Thursday, January 18, 2018 - 5:38:21 PM
Last modification on : Wednesday, September 5, 2018 - 8:20:02 PM

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  • HAL Id : lirmm-01687795, version 1

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Yoann Guillemenet, Lionel Torres. Memory cell with volatile and non-volatile storage. United States, Patent n° : US20140167816 (A1). 2014. ⟨lirmm-01687795⟩

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