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Volatile/non-volatile memory cell

Abstract : The invention concerns a memory device comprising at least one memory cell comprising: a first transistor (102) coupled between a first storage node (106) and a first resistance switching element (202) programmed to have a first resistance; and a second transistor (104) coupled between a second storage node (108) and a second resistance switching element (204) programmed to have a second resistance, a control terminal of said first transistor being coupled to said second storage node, and a control terminal of said second transistor being coupled to said first storage node; and control circuitry (602) adapted to store a data value (DNV) at said first and second storage nodes by coupling said first and second storage nodes to a first supply voltage (VDD, GND), the data value being determined by the relative resistances of the first and second resistance switching elements.
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01688089
Contributor : Caroline Lebrun <>
Submitted on : Friday, January 19, 2018 - 10:11:12 AM
Last modification on : Tuesday, May 11, 2021 - 11:36:05 AM

Identifiers

  • HAL Id : lirmm-01688089, version 1

Citation

Yoann Guillemenet, Lionel Torres, Guillaune Prenat, Kholdoun Torki, Gregory Di Pendina. Volatile/non-volatile memory cell. United States, Patent n° : US20140070844 A1. 2014. ⟨lirmm-01688089⟩

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