D. H. Habing, The Use of Lasers to Simulate Radiation-Induced Transients in Semiconductor Devices and Circuits, IEEE Transactions on Nuclear Science, vol.12, issue.5, pp.91-100, 1965.
DOI : 10.1109/TNS.1965.4323904

S. P. Skorobogatov and R. J. Anderson, Optical Fault Induction Attacks, 4th International Workshop on Cryptographic Hardware and Embedded Systems, pp.2-12, 2002.
DOI : 10.1007/3-540-36400-5_2

A. G. Jordan and A. G. Milnes, Photoeffect on diffused P-N junctions with integral field gradients, IRE Transactions on Electron Devices, vol.7, issue.4, pp.242-251, 1960.
DOI : 10.1109/T-ED.1960.14688

J. L. Wirth and S. C. Rogers, The transient response of transistors and diodes to ionizing radiation, IEEE Transactions on Nuclear Science, vol.11, 1964.

F. Lu, Laser-Induced Fault Simulation, 2013 Euromicro Conference on Digital System Design, 2013.
DOI : 10.1109/DSD.2013.72
URL : https://hal.archives-ouvertes.fr/lirmm-01430807

A. H. Johnston, Charge generation and collection in p-n junctions excited with pulsed infrared lasers, IEEE Transactions on Nuclear Science, vol.40, issue.6, 1993.
DOI : 10.1109/23.273491

J. Ma, Identification of IR-drop hot-spots in defective power distribution network using TDF ATPG, 2010 5th International Design and Test Workshop, p.5, 2010.
DOI : 10.1109/IDT.2010.5724422

S. Zhao and K. Roy, Estimation of switching noise on power supply lines in deep sub-micron cmos circuits, VLSI Design Thirteenth International Conference on, pp.168-173, 2000.

J. Dutertre, Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS, Microelectronics Reliability, vol.54, issue.9-10, pp.2289-2294, 2014.
DOI : 10.1016/j.microrel.2014.07.151
URL : https://hal.archives-ouvertes.fr/emse-01094805

A. Douin, Electrical modeling for laser testing with different pulse durations, 11th IEEE International On-Line Testing Symposium, pp.9-13, 2005.
DOI : 10.1109/IOLTS.2005.27
URL : https://hal.archives-ouvertes.fr/hal-00397739

H. M. Huang, Fast-yet-accurate variation-aware current and voltage modelling of radiation-induced transient fault, DATE, 2016.

C. Godlewski, Electrical modeling of the effect of beam profile for pulsed laser fault injection Microelectronics Reliability, 2009.

L. Hériveaux, Electrical modeling of the effect of photoelectric laser fault injection on bulk cmos design, 39th ISTFA ASM, 2013.

S. Buchner, Pulsed-Laser Testing for Single-Event Effects Investigations, IEEE Transactions on Nuclear Science, vol.60, issue.3, 2013.
DOI : 10.1109/TNS.2013.2255312
URL : https://hal.archives-ouvertes.fr/hal-01633917

G. C. Messenger, Collection of Charge on Junction Nodes from Ion Tracks, IEEE Transactions on Nuclear Science, vol.29, issue.6, 1982.
DOI : 10.1109/TNS.1982.4336490

A. Sarafianos, Building the electrical model of the pulsed photoelectric laser stimulation of an NMOS transistor in 90nm technology, 2013 IEEE International Reliability Physics Symposium (IRPS), pp.5-5, 2013.
DOI : 10.1109/IRPS.2013.6532028
URL : https://hal.archives-ouvertes.fr/emse-01109124

X. Wang and D. Su, On-chip EMI monitoring for integrated circuits of 55nm and below technologies, 2014 XXXIth URSI General Assembly and Scientific Symposium (URSI GASS), pp.1-4, 2014.
DOI : 10.1109/URSIGASS.2014.6929430

K. Peng, Emulating and diagnosing IR-drop by using dynamic SDF, 2010 15th Asia and South Pacific Design Automation Conference (ASP-DAC), pp.511-516, 2010.
DOI : 10.1109/ASPDAC.2010.5419829

F. Darracq, Backside SEU laser testing for commercial off-the-shelf SRAMs, IEEE Transactions on Nuclear Science, vol.49, issue.6, 2002.
DOI : 10.1109/TNS.2002.805393
URL : https://hal.archives-ouvertes.fr/hal-00204728

C. Roscian, Fault Model Analysis of Laser-Induced Faults in SRAM Memory Cells, 2013 Workshop on Fault Diagnosis and Tolerance in Cryptography, pp.89-98, 2013.
DOI : 10.1109/FDTC.2013.17
URL : https://hal.archives-ouvertes.fr/emse-01109133