A physics-based investigation of Pt-salt doped carbon nanotubes for local interconnects
Jie Liang
(1)
,
Raphael Ramos
(2)
,
Jean Dijon
(2)
,
H. Okuno
(3)
,
D. Kalita
(3)
,
D. Renaud
(2)
,
J. Lee
(4)
,
Vihar Petkov Georgiev
(4)
,
Salim Berrada
(4)
,
T. Sadi
(4)
,
A. Asenov
(4)
,
B. Uhlig
(5)
,
K. Lilienthal
(5)
,
A. Dhavamani
(5)
,
F. Konemann
(6)
,
B. Gotsmann
(6)
,
G. Goncalves
(7)
,
B. Chen
(7)
,
K. Teo
(7)
,
Reetu Raj Pandey
(1)
,
Aida Todri-Sanial
(1)
1
SmartIES -
Smart Integrated Electronic Systems
2 LITEN - Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux
3 INAC - Institut Nanosciences et Cryogénie
4 James Watt School of Engineering [Univ Glasgow]
5 Fraunhofer IWS - Fraunhofer Institute Material and Beam Technology [Dresden]
6 IBM Research Laboratory [Zurich]
7 Aixtron (UK)
2 LITEN - Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux
3 INAC - Institut Nanosciences et Cryogénie
4 James Watt School of Engineering [Univ Glasgow]
5 Fraunhofer IWS - Fraunhofer Institute Material and Beam Technology [Dresden]
6 IBM Research Laboratory [Zurich]
7 Aixtron (UK)
Raphael Ramos
- Function : Author
- PersonId : 854590
- IdHAL : raphramos
- ORCID : 0000-0003-0627-6959
Salim Berrada
- Function : Author
- PersonId : 772215
- ORCID : 0000-0003-3740-4589
G. Goncalves
- Function : Author
- PersonId : 2837
- IdHAL : gilles-goncalves
- ORCID : 0000-0001-5564-9673
- IdRef : 069560781
Aida Todri-Sanial
- Function : Author
- PersonId : 6348
- IdHAL : todri
- ORCID : 0000-0001-8573-2910
- IdRef : 235598879
Abstract
We investigate, by combining physical and electrical measurements together with an atomistic-to-circuit modeling approach, the conductance of doped carbon nanotubes (CNTs) and their eligibility as possible candidate for next generation back-end-of-line (BEOL) interconnects. Ab-initio simulations predict a doping-related shift of the Fermi level, which reduces shell chirality variability and improves electrical conductance up to 90% by converting semiconducting shells to metallic. Circuit-level simulations predict up to 88% signal delay improvement with doped vs. pristine CNT. Electrical measurements of Pt-salt doped CNTs provide up to 50% of resistance reduction which is a milestone result for future CNT interconnect technology.