W. Steinhögl, G. Schindler, G. Steinlesberger, M. Traving, and M. Engelhardt, Comprehensive study of the resistivity of copper wires with lateral dimensions of 100 nm and smaller, Journal of Applied Physics, vol.97, issue.2, p.23706, 2005.

A. Pyzyna, H. Tsai, M. Lofaro, L. Gignac, H. Miyazoe et al., Resistivity of copper interconnects at 28 nm pitch and copper cross-sectional area below 100 nm 2, IEEE International Interconnect Technology Conference (IITC), pp.1-3, 2017.

A. Karkar, T. Mak, K. Tong, and A. Yakovlev, A survey of emerging interconnects for on-chip efficient multicast and broadcast in manycores, IEEE Circuits and Systems Magazine, vol.16, issue.1, pp.58-72, 2016.

A. Todri-sanial, J. Dijon, and A. Maffucci, Carbon Nanotubes for Interconnects, pp.978-981, 2017.
URL : https://hal.archives-ouvertes.fr/lirmm-02132496

C. Subramaniam, T. Yamada, K. Kobashi, A. Sekiguchi, D. N. Futaba et al., One hundred fold increase in current carrying capacity in a carbon nanotube-copper composite, Nature communications, vol.4, issue.2202, 2013.

A. R. Harutyunyan, G. Chen, T. M. Paronyan, E. M. Pigos, O. A. Kuznetsov et al., Preferential growth of single-walled carbon nanotubes with metallic conductivity, Science, vol.326, issue.5949, pp.116-120, 2009.

K. K. Koziol, C. Ducati, and A. H. Windle, Carbon nanotubes with catalyst controlled chiral angle, Chemistry of Materials, vol.22, issue.17, pp.4904-4911, 2010.

S. Esconjauregui, L. D'arsié, Y. Guo, J. Yang, H. Sugime et al., Efficient transfer doping of carbon nanotube forests by moo3, ACS nano, vol.9, issue.10, 2015.

J. Liang, R. Ramos, J. Dijon, H. Okuno, D. Kalita et al., A Physics-Based Investigation of Pt-Salt Doped Carbon Nanotubes for Local Interconnects, IEEE International Electron Devices Meeting (IEDM), pp.35-40, 2017.
URL : https://hal.archives-ouvertes.fr/lirmm-01795777

M. Bockrath, W. Liang, D. Bozovic, J. H. Hafner, C. M. Lieber et al., Resonant electron scattering by defects in single-walled carbon nanotubes, Science, vol.291, issue.5502, pp.283-285, 2001.

E. Aghabararian and A. Shahhoseini, Effect of relative rotation of walls on the conductance of double-walled carbon nanotubes, IEEE Electrical Engineering (ICEE), pp.1063-1066, 2015.

J. Lee, S. Berrada, J. Liang, T. Sadi, V. P. Georgiev et al., The impact of vacancy defects on cnt interconnects: From statistical atomistic study to circuit simulations, IEEE Simulation of Semiconductor Processes and Devices (SISPAD) Conference, pp.157-160, 2017.
URL : https://hal.archives-ouvertes.fr/lirmm-01795799

N. Srivastava and K. Banerjee, Performance analysis of carbon nanotube interconnects for vlsi applications, IEEE/ACM International conference on Computer-aided design, pp.383-390, 2005.

H. Li, W. Yin, K. Banerjee, and J. Mao, Circuit modeling and performance analysis of multi-walled carbon nanotube interconnects, IEEE Transactions on electron devices, vol.55, issue.6, pp.1328-1337, 2008.

J. Liang, L. Zhang, N. Azemard-crestani, P. Nouet, and A. Todrisanial, Physical description and analysis of doped carbon nanotube interconnects, IEEE International Workshop on Power and Timing Modeling, Optimization and Simulations (PATMOS), pp.250-255, 2016.
URL : https://hal.archives-ouvertes.fr/lirmm-01457338

J. Jiang, J. Dong, H. Yang, and D. Xing, Universal expression for localization length in metallic carbon nanotubes, Physical Review B, vol.64, issue.4, p.45409, 2001.

A. D. Franklin and Z. Chen, Length scaling of carbon nanotube transistors, Nature nanotechnology, vol.5, issue.12, p.858, 2010.

, She is currently a PhD student at the University of, Jie Liang Jie Liang received the B.S. degree in Physics from Paris Denis-Diderot, 2016.

, degrees in electrical engineering from the Korea Advanced Institute of Science and Technology, he was involved in low power DRAM development with SK Hynix, 2006.

, He also served as an associated professor in INSA Euro-Mditerrane in Fès, Morocco during the academic year 2015-2016, Salim Berrada Salim Berrada received a M.S. in Micro and Nanotechnologies and a Ph.D. degree in Physics both from Paris-Sud University in 2010 and 2014 respectively

P. G. Vihar and U. K. Vihar-p-;-oxford, Currently he is a Lecturer at University of Glasgow and a deputy group of Device Modelling Group at University of Glasgow. His research includes device modelling, molecular electronics, Georgiev -(M12) received his Ph.D. degree in computational chemistry from University of Oxford, 2011.

R. Pandey-dr, Dr. Pandey has worked as junior specialist in University of California, Merced USA in 2015 on a short-term project. He received his M.tech degree in Microelectronics from Department of Electronics, Indian Institute of Technology in 2012 and B.Tech degree in Electronics and Communication engineering in 2009. His research interests include micro-nano device fabrications, 2017.

, He got the second prize for his Ph.D. thesis of Tsinghua University, degrees in Engineering Physics and Nuclear Technology in 2012 and 2017 respectively from Tsinghua University

, He is the James Watt professor of Electrical Engineering at University of Glasgow and a former CEO of Gold Standard Simulations, Asen Asenov Asen Asenov (M96-SM05-F11) received the PhD degree in Solid State Physics from the Bulgarian Academy of Science, 1989.

, USA in 2009. She is currently a Research Scientist at CNRS (French National Center for Scientific Research) and member of the Microelectronics Department at LIRMM since, 2002.

. Ibm-tj-watson-research and . Center, Dr. Todri-Sanial is recipient of several awards, CNRS Scientific Excellence Award (PES) 2012, John Bardeen Fellow in Engineering at Fermilab, 2006.