Power and Performance Analysis of Doped SW/DW CNT for On-Chip Interconnect Application - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2017

Power and Performance Analysis of Doped SW/DW CNT for On-Chip Interconnect Application

Aida Todri-Sanial
Jie Liang
  • Function : Author
  • PersonId : 971767

Abstract

We investigate the electrical properties of doped single wall (SW) and double wall (DW) carbon nanotube (CNT) for integrated circuits interconnect applications. P-type Iodine charge transferred doping has been studied for modifying electrical properties and models of CNT interconnects. We perform circuit-level simulations on a 5-stage ring oscillator implemented with 45nm CMOS technology node devices for power and performance analysis with doped SWCNT and DWCNT interconnects.
Fichier principal
Vignette du fichier
Grapheneconf2017_LIANG_Jie_481.pdf (1.02 Mo) Télécharger le fichier
Loading...

Dates and versions

lirmm-01800286 , version 1 (25-05-2018)

Identifiers

  • HAL Id : lirmm-01800286 , version 1

Cite

Aida Todri-Sanial, Jie Liang. Power and Performance Analysis of Doped SW/DW CNT for On-Chip Interconnect Application. GRAPHENE, Mar 2017, Barcelone, Spain. ⟨lirmm-01800286⟩
144 View
60 Download

Share

Gmail Facebook X LinkedIn More