Power and Performance Analysis of Doped SW/DW CNT for On-Chip Interconnect Application

Aida Todri-Sanial 1 Jie Liang 1
1 SmartIES - Smart Integrated Electronic Systems
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Abstract : We investigate the electrical properties of doped single wall (SW) and double wall (DW) carbon nanotube (CNT) for integrated circuits interconnect applications. P-type Iodine charge transferred doping has been studied for modifying electrical properties and models of CNT interconnects. We perform circuit-level simulations on a 5-stage ring oscillator implemented with 45nm CMOS technology node devices for power and performance analysis with doped SWCNT and DWCNT interconnects.
Type de document :
Communication dans un congrès
GRAPHENE, Mar 2017, Barcelone, Spain. 7th edition of the largest European Conference in Graphene and 2D Materials, 2017, 〈http://www.grapheneconf.com/2017/〉
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Soumis le : vendredi 25 mai 2018 - 16:52:27
Dernière modification le : mardi 23 octobre 2018 - 17:22:04
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  • HAL Id : lirmm-01800286, version 1

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Aida Todri-Sanial, Jie Liang. Power and Performance Analysis of Doped SW/DW CNT for On-Chip Interconnect Application. GRAPHENE, Mar 2017, Barcelone, Spain. 7th edition of the largest European Conference in Graphene and 2D Materials, 2017, 〈http://www.grapheneconf.com/2017/〉. 〈lirmm-01800286〉

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