Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence
Abstract
Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
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