S. Kuboyama, C. Kamezawa, Y. Satoh, T. Hirao, and H. Ohyama, Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons, IEEE Trans. Nucl. Sci, vol.54, issue.6, pp.2379-2383, 2007.

E. Mizuta, S. Kuboyama, H. Abe, Y. Iwata, and T. Tamura, Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs, IEEE Trans. Nucl. Sci, vol.61, issue.4, pp.1924-1928, 2014.

L. Scheick, L. Selva, and H. Becker, Displacement damageinduced catastrophic second breakdown in silicon carbide Schottky power diodes, IEEE Trans. Nucl. Sci, vol.51, issue.6, pp.3193-3200, 2004.

M. Allenspach, SEGR and SEB in n-channel power

. Mosfets, IEEE Trans. Nucl. Sci, vol.43, issue.6, pp.2927-2931, 1996.

V. Ferlet-cavrois, Influence of Beam Conditions and Energy for SEE Testing, IEEE Trans. Nucl. Sci, vol.59, issue.4, pp.1149-1160, 2012.
URL : https://hal.archives-ouvertes.fr/in2p3-00731111

S. Kuboyama, C. Kamezawa, N. Ikeda, T. Hirao, and H. Ohyama, Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout, IEEE Trans. Nucl. Sci, vol.53, issue.6, pp.3343-3348, 2006.

A. Javanainen, Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes, IEEE Trans. Device Mater. Reliab, vol.16, issue.2, pp.208-212, 2016.

I. Mouret, M. Allenspach, R. D. Schrimpf, J. R. Brews, and K. F. ,

P. Galloway and . Calvel, Temperature and angular dependence of substrate response in SEGR [power MOSFET], IEEE Trans. Nucl. Sci, vol.41, issue.6, pp.2216-2221, 1994.

C. Abbate, Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes, IEEE Trans. Nucl. Sci, vol.62, issue.1, pp.202-209, 2015.

C. Abbate, Thermal damage in SiC Schottky diodes induced by SE heavy ions, Microelectron. Reliab, vol.54, issue.9, pp.2200-2206, 2014.

A. Javanainen, Incident Angle Effect on Heavy Ion Induced Reverse Leakage Current in SiC Schottky Diodes, Proc. 2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS), pp.1-4, 2016.

A. Virtanen, H. Kettunen, A. Javanainen, M. Rossi, and J. Jaatinen, RADiation Effects Facility at JYFL

A. Javanainen, European Component Irradiation Facilities Cocktail Calculator, 2015.

/. Keithley and . Tektronix, Keithley 2400 Series

A. Javanainen, Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence, IEEE Trans. Nucl. Sci, vol.64, issue.1, pp.415-420, 2017.

S. Inc, Victory Device User's Manual, 2016.

S. K. Chaudhuri, K. J. Zavalla, and K. C. , Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach, Appl. Phys. Lett, vol.102, issue.3, p.31109, 2013.

T. R. Garcia, A. Kumar, B. Reinke, T. E. Blue, and W. Windl, Electron-hole pair generation in SiC high-temperature alpha particle detectors, Appl. Phys. Lett, vol.103, issue.15, p.152108, 2013.

T. Hatakeyama, J. Nishio, C. Ota, and T. Shinohe, Physical Modeling and Scaling Properties of 4H-SiC Power Devices, 2005 International Conference On Simulation of Semiconductor Processes and Devices, pp.171-174, 2005.

M. Backman, Molecular dynamics simulations of swift heavy ion induced defect recovery in SiC, Comput. Mater. Sci, vol.67, pp.261-265, 2013.
URL : https://hal.archives-ouvertes.fr/in2p3-00749839

O. Ochedowski, Graphitic nanostripes in silicon carbide surfaces created by swift heavy ion irradiation, Nat. Commun, vol.5, p.16102, 2014.

C. Buttay, C. Raynaud, H. Morel, G. Civrac, M. Locatelli et al.,

. Morel, Thermal Stability of Silicon Carbide Power Diodes, IEEE Trans. Electron Devices, vol.59, issue.3, pp.761-769, 2012.
URL : https://hal.archives-ouvertes.fr/hal-00672440

M. Roschke and F. Schwierz, Electron mobility models for 4H, 6H, and 3C SiC, IEEE Trans. Electron Devices, vol.48, issue.7, pp.1442-1447, 2001.

R. Katz, Track structure theory in radiobiology and in radiation detection, Nucl. Track Detect, vol.2, issue.1, pp.1-28, 1978.