Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons, IEEE Trans. Nucl. Sci, vol.54, issue.6, pp.2379-2383, 2007. ,
Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs, IEEE Trans. Nucl. Sci, vol.61, issue.4, pp.1924-1928, 2014. ,
Displacement damageinduced catastrophic second breakdown in silicon carbide Schottky power diodes, IEEE Trans. Nucl. Sci, vol.51, issue.6, pp.3193-3200, 2004. ,
SEGR and SEB in n-channel power ,
, IEEE Trans. Nucl. Sci, vol.43, issue.6, pp.2927-2931, 1996.
Influence of Beam Conditions and Energy for SEE Testing, IEEE Trans. Nucl. Sci, vol.59, issue.4, pp.1149-1160, 2012. ,
URL : https://hal.archives-ouvertes.fr/in2p3-00731111
Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout, IEEE Trans. Nucl. Sci, vol.53, issue.6, pp.3343-3348, 2006. ,
Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes, IEEE Trans. Device Mater. Reliab, vol.16, issue.2, pp.208-212, 2016. ,
,
Temperature and angular dependence of substrate response in SEGR [power MOSFET], IEEE Trans. Nucl. Sci, vol.41, issue.6, pp.2216-2221, 1994. ,
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes, IEEE Trans. Nucl. Sci, vol.62, issue.1, pp.202-209, 2015. ,
Thermal damage in SiC Schottky diodes induced by SE heavy ions, Microelectron. Reliab, vol.54, issue.9, pp.2200-2206, 2014. ,
Incident Angle Effect on Heavy Ion Induced Reverse Leakage Current in SiC Schottky Diodes, Proc. 2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS), pp.1-4, 2016. ,
RADiation Effects Facility at JYFL ,
European Component Irradiation Facilities Cocktail Calculator, 2015. ,
Keithley 2400 Series ,
Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence, IEEE Trans. Nucl. Sci, vol.64, issue.1, pp.415-420, 2017. ,
Victory Device User's Manual, 2016. ,
Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach, Appl. Phys. Lett, vol.102, issue.3, p.31109, 2013. ,
Electron-hole pair generation in SiC high-temperature alpha particle detectors, Appl. Phys. Lett, vol.103, issue.15, p.152108, 2013. ,
Physical Modeling and Scaling Properties of 4H-SiC Power Devices, 2005 International Conference On Simulation of Semiconductor Processes and Devices, pp.171-174, 2005. ,
Molecular dynamics simulations of swift heavy ion induced defect recovery in SiC, Comput. Mater. Sci, vol.67, pp.261-265, 2013. ,
URL : https://hal.archives-ouvertes.fr/in2p3-00749839
Graphitic nanostripes in silicon carbide surfaces created by swift heavy ion irradiation, Nat. Commun, vol.5, p.16102, 2014. ,
,
Thermal Stability of Silicon Carbide Power Diodes, IEEE Trans. Electron Devices, vol.59, issue.3, pp.761-769, 2012. ,
URL : https://hal.archives-ouvertes.fr/hal-00672440
Electron mobility models for 4H, 6H, and 3C SiC, IEEE Trans. Electron Devices, vol.48, issue.7, pp.1442-1447, 2001. ,
Track structure theory in radiobiology and in radiation detection, Nucl. Track Detect, vol.2, issue.1, pp.1-28, 1978. ,