Design of a Highly Reliable SRAM Cell with Advanced Self-Recoverability from Soft Errors
Abstract
In this paper, a highly reliable SRAM cell, namely SESRS cell, is proposed. Since the cell has a special feedback mechanism among its internal nodes and has more access transistors compared to a standard SRAM cell, the SESRS cell provides the following advantages: (1) it can self-recover from single node upsets (SNUs) and double-node upsets (DNUs); (2) it can reduce power consumption by 49.78% and silicon area by 7.92%, compared with the only existing SRAM cell which can self-recover from all possible DNUs. Simulation results validate the robustness of the proposed SESRS cell. Moreover, compared with the state-of-the-art hardened SRAM cells, the proposed SESRS cell can reduce read access time by 61.93% on average.
| Origin | Publication funded by an institution |
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