Technology Dependence of Stuck Bits and Single Event Upsets in 110, 72, and 63-nm SDRAMs - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Poster Year : 2022

Technology Dependence of Stuck Bits and Single Event Upsets in 110, 72, and 63-nm SDRAMs

Abstract

Three SDRAMs from the same manufacturer with technology node sizes 110, 72, and 63 nm, were investigated under proton irradiation and using scanning electron microscopy (SEM). The radiation-induced faults were characterized and compared between the different memory models. The devices under test (DUT) were irradiated with protons and experienced single event effects (SEE) in the form of stuck bits and single bit upsets (SBU). Analysis of the data retention times of bits which had SBU and were stuck during irradiation, showed similar patterns of retention time degradation, suggesting that the SBUs and stuck bits in all three models were likely induced by the same mechanism. Detailed data retention time analyses were also performed before and after irradiation to investigate the evolution of data retention times after irradiation, and after periods of annealing. The largest radiation-induced retention time losses were found to anneal, but the bits least affected directly after irradiation experienced decreasing data retention time as a function of annealing time. SEM imaging showed differences in the memory cell structure between the tested memory models, which were discussed in relation to the radiation sensitivity of the different DUTs.
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Dates and versions

lirmm-03834026 , version 1 (28-10-2022)

Identifiers

  • HAL Id : lirmm-03834026 , version 1

Cite

Daniel Söderström, Lucas Matana Luza, André Martins Pio de Mattos, Thierry Gil, Heikki Kettunen, et al.. Technology Dependence of Stuck Bits and Single Event Upsets in 110, 72, and 63-nm SDRAMs. RADECS 2022 - RADiation and its Effects on Components and Systems, Oct 2022, Venice, Italy. , 2022. ⟨lirmm-03834026⟩
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