Nonvolatile and SEU-Recoverable Latch Based on FeFET and CMOS for Energy-Harvesting Devices - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Conference Papers Year : 2024

Nonvolatile and SEU-Recoverable Latch Based on FeFET and CMOS for Energy-Harvesting Devices

Aibin Yan
Guangzhu Liu
Qingyang Zhang
Zhengfeng Huang
Jie Cui
Xiaoqing Wen

Abstract

Nonvolatile memories are widely used in emerging energy-harvesting Internet-of-Things (IoT) applications, and nonvolatile memories constructed from FeFET devices hold great promise. This paper presents a nonvolatile and single-event-upset (SEU)-recoverable latch based on FeFET and CMOS for energyharvesting devices. The latch uses n-type FeFET devices to provide nonvolatility without any additional control signals. Moreover, since the soft error problem has become increasingly severe, radiation hardening by design gains a great attention as a promising approach to mitigate the reliability issue. The latch uses feedback interlocked loops with n-type FeFETs and C-elements, enabling it to provide nonvolatility and SEU-recovery simultaneously. Simulation results with Candence Virtuoso verifies that the proposed latch design has correct functioning with excellent performance compared to the state-of-the-art designs.
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Dates and versions

lirmm-04738244 , version 1 (15-10-2024)

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Aibin Yan, Zhuoyuan Lin, Guangzhu Liu, Qingyang Zhang, Zhengfeng Huang, et al.. Nonvolatile and SEU-Recoverable Latch Based on FeFET and CMOS for Energy-Harvesting Devices. ISCAS 2024 - IEEE International Symposium on Circuits and Systems, May 2024, Singapore, Singapore. pp.1-5, ⟨10.1109/ISCAS58744.2024.10558033⟩. ⟨lirmm-04738244⟩
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