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Journal articles
DC-100-GHz Frequency Doublers in InP DHBT Technology
Abstract : Broad-band monolithic integrated active frequency doublers operating in dc-100-GHz frequency range are presented. Circuits are fabricated in a self-aligned InP double heterojunction bipolar transistor process. Three integrated doubler versions have been designed. Inductive peaking and active splitting effects are quantified and compared. Circuit measurements give sinusoidal output waveform at 100 GHz with an rms timing jitter of 400 fs. Circuits have a maximum conversion gain of +1 dB at 60 GHz. the fundamental suppression is better than 24 dB in the whole frequency range.
Cited literature [13 references]
https://hal-lirmm.ccsd.cnrs.fr/lirmm-00105306
Contributor : Christine Carvalho de Matos <>
Submitted on : Wednesday, October 11, 2006 - 7:51:17 AM
Last modification on : Tuesday, January 5, 2021 - 4:00:04 PM
Long-term archiving on: : Tuesday, April 6, 2010 - 7:16:53 PM
Contributor : Christine Carvalho de Matos <>
Submitted on : Wednesday, October 11, 2006 - 7:51:17 AM
Last modification on : Tuesday, January 5, 2021 - 4:00:04 PM
Long-term archiving on: : Tuesday, April 6, 2010 - 7:16:53 PM