DC-100-GHz Frequency Doublers in InP DHBT Technology

Abstract : Broad-band monolithic integrated active frequency doublers operating in dc-100-GHz frequency range are presented. Circuits are fabricated in a self-aligned InP double heterojunction bipolar transistor process. Three integrated doubler versions have been designed. Inductive peaking and active splitting effects are quantified and compared. Circuit measurements give sinusoidal output waveform at 100 GHz with an rms timing jitter of 400 fs. Circuits have a maximum conversion gain of +1 dB at 60 GHz. the fundamental suppression is better than 24 dB in the whole frequency range.
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IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2005, 53 (4), pp.1338-1344. 〈10.1109/TMTT.2005.845766〉
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Soumis le : mercredi 11 octobre 2006 - 07:51:17
Dernière modification le : mardi 23 octobre 2018 - 14:36:05
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Vincent Puyal, Agnieszka Konczykowska, Pascal Nouet, Serge Bernard, Sylvain Blayac, et al.. DC-100-GHz Frequency Doublers in InP DHBT Technology. IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2005, 53 (4), pp.1338-1344. 〈10.1109/TMTT.2005.845766〉. 〈lirmm-00105306〉

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