Resistive-Open Defect Injection in SRAM Core-Cell: Analysis and Comparison between 0.13μm and 90nm Technologies - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2005

Resistive-Open Defect Injection in SRAM Core-Cell: Analysis and Comparison between 0.13μm and 90nm Technologies

Abstract

Resistive-open defects appear more and more frequently in VDSM technologies. In this paper we present a study concerning resistive-open defects in the core-cell of SRAM memories. The first target of this work is a comparison of the effect produced by resistive-open defects in the 0.13 µm and 90 nm core-cell. We show that the 90 nm core-cell is more robust than the 0.13 µm core-cell in presence of resistive-open defects. On the other hand we show that dynamic faults are most likely to occur in the 90 nm than in 0.13 µm core-cell. Finally we propose a unique March test solution that ensures the complete coverage of all the extracted fault models for both technologies.
No file

Dates and versions

lirmm-00106558 , version 1 (13-02-2019)

Identifiers

Cite

Luigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Magali Bastian Hage-Hassan. Resistive-Open Defect Injection in SRAM Core-Cell: Analysis and Comparison between 0.13μm and 90nm Technologies. DAC: Design Automation Conference, May 2005, Anaheim, CA, United States. pp.857-862, ⟨10.1145/1065579.1065804⟩. ⟨lirmm-00106558⟩
58 View
0 Download

Altmetric

Share

Gmail Facebook X LinkedIn More