Resistive-Open Defect Injection in SRAM Core-Cell: Analysis and Comparison between 0.13μm and 90nm Technologies

Luigi Dilillo 1 Patrick Girard 1 Serge Pravossoudovitch 1 Arnaud Virazel 1 Magali Bastian Hage-Hassan
1 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Abstract : Resistive-open defects appear more and more frequently in VDSM technologies. In this paper we present a study concerning resistive-open defects in the core-cell of SRAM memories. The first target of this work is a comparison of the effect produced by resistive-open defects in the 0.13 µm and 90 nm core-cell. We show that the 90 nm core-cell is more robust than the 0.13 µm core-cell in presence of resistive-open defects. On the other hand we show that dynamic faults are most likely to occur in the 90 nm than in 0.13 µm core-cell. Finally we propose a unique March test solution that ensures the complete coverage of all the extracted fault models for both technologies.
Liste complète des métadonnées

https://hal-lirmm.ccsd.cnrs.fr/lirmm-00106558
Contributor : Christine Carvalho de Matos <>
Submitted on : Wednesday, February 13, 2019 - 12:05:26 PM
Last modification on : Wednesday, February 13, 2019 - 12:14:06 PM

Identifiers

Collections

Citation

Luigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Magali Bastian Hage-Hassan. Resistive-Open Defect Injection in SRAM Core-Cell: Analysis and Comparison between 0.13μm and 90nm Technologies. DAC: Design Automation Conference, May 2005, Anaheim, CA, United States. pp.857-862, ⟨10.1145/1065579.1065804⟩. ⟨lirmm-00106558⟩

Share

Metrics

Record views

49