Definition of P/N Width Ratio for CMOS Standard Cell Library - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2004

Definition of P/N Width Ratio for CMOS Standard Cell Library

Abstract

The efficiency of cell-based design synthesis of high performance circuit is strongly dependent on the content of the library. Great effort has been given in the design of libraries, to define the optimal selection of the logic gate drive strength. But few justifications are available to determine the P/N width ratio of each cell. In this paper we use an extension of the logical effort model to characterize the dissymmetry of gate delay and define the best P/N width ratio allowing a path minimum area implementation under delay constraint. This delay model explicitly represents the sensitivity of delay to gate structure and P/N width ratio. Application is given on a 0.18µm process on different logic path implementations.
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Dates and versions

lirmm-00108933 , version 1 (21-01-2017)

Identifiers

  • HAL Id : lirmm-00108933 , version 1

Cite

Alexandre Verle, Philippe Maurine, Nadine Azemard, Daniel Auvergne. Definition of P/N Width Ratio for CMOS Standard Cell Library. DCIS: Design of Circuits and Integrated Systems, Nov 2004, Bordeaux, France. pp.769-773. ⟨lirmm-00108933⟩
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