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Conference Papers Year : 2002

Impact of Low-k on Crosstalk


With the reduction of distances between wires in deep sub-micron technologies, coupling capacitances are becoming significant. This increase of capacity causes noise capable of propagating a logical fault. A poor evaluation of the crosstalk could be at the root of a malfunction of the circuit. Closed-form formulas are particularly efficient at determining design rules. From an analytical expression for crosstalk evaluation, we explore the performance gain through different intra-layer dielectrics, for a given typical geometry of an upper metal level of a deep sub-micron technology. This model predicts that by using a low-k dielectric equal to two, one can reduce the crosstalk voltage by about 25%, which can be employed on a possible reduction of the space between lines.
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lirmm-00268532 , version 1 (01-04-2008)



Gregory Servel, Denis Deschacht, Françoise Saliou, Jean-Luc Mattei, Fabrice Huret. Impact of Low-k on Crosstalk. ISQED 2002 - 3rd International Symposium on Quality Electronic Design, Mar 2002, San Jose, United States. pp.298-303, ⟨10.1109/ISQED.2002.996757⟩. ⟨lirmm-00268532⟩
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