Impact of Low-k on Crosstalk

Abstract : With the reduction of distances between wires in deep sub-micron technologies, coupling capacitances are becoming significant. This increase of capacity causes noise capable of propagating a logical fault. A poor evaluation of the crosstalk could be at the root of a malfunction of the circuit. Closed-form formulas are particularly efficient at determining design rules. From an analytical expression for crosstalk evaluation, we explore the performance gain through different intra-layer dielectrics, for a given typical geometry of an upper metal level of a deep sub-micron technology. This model predicts that by using a low-k dielectric equal to two, one can reduce the crosstalk voltage by about 25%, which can be employed on a possible reduction of the space between lines.
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00268532
Contributor : Christine Carvalho de Matos <>
Submitted on : Tuesday, April 1, 2008 - 9:27:41 AM
Last modification on : Thursday, October 17, 2019 - 12:34:55 PM

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Gregory Servel, Denis Deschacht, Françoise Saliou, Jean-Luc Mattei, Fabrice Huret. Impact of Low-k on Crosstalk. ISQED: International Symposium on Quality Electronic Design, Mar 2002, San Jose, United States. pp.298-303, ⟨10.1109/ISQED.2002.996757⟩. ⟨lirmm-00268532⟩

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