Modeling the Random Parameter Effects in a Non-Split Model of Gate Oxide Short - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Journal Articles Journal of Electronic Testing: : Theory and Applications Year : 2003

Modeling the Random Parameter Effects in a Non-Split Model of Gate Oxide Short

Abstract

This paper presents a new model for gate-to-channel GOS defects. The transistors used in digital cell library are usually designed wish a minimum-size. This new model permits to handle minimal-length transistors allowing the simulation of GOS defects in realistic digital circuits. Based on the electrical analysis of the defect behavior, a comprehensive method for the model construction is detailed. It is shown that the behavior of the proposed model matches in a satisfactory way the behavior of a defective transistor including the random parameters of the defect.

Dates and versions

lirmm-00269754 , version 1 (03-04-2008)

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Michel Renovell, Jean-Marc J.-M. Galliere, Florence Azaïs, Yves Bertrand. Modeling the Random Parameter Effects in a Non-Split Model of Gate Oxide Short. Journal of Electronic Testing: : Theory and Applications, 2003, 19 (4), pp. 377-386. ⟨10.1023/A:1024683708105⟩. ⟨lirmm-00269754⟩
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