Viability of a Delay Testing of Gate Oxide Short Transistors - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Journal Articles Journal of Computer Science and Technology Year : 2005

Viability of a Delay Testing of Gate Oxide Short Transistors

Abstract

Gate Oxide Short defects are becoming predominant as technology is scaling down. Boolean and IDDQ testing of this defect has been widely studied but there is no paper dedicated to delay testing of this defect. So, this paper studies the delay behavior of Gate Oxide Short faults due to pinhole in the gate oxide. The objective of this paper is to give a detailed analysis of the behavior of the GOS defect taking into account the random parameter of the defect such as the GOS resistance and the GOS location. Because an accurate analysis is desired, the bi-dimensional array will be used. Because a complete analysis is desired, we derive the dynamic characteristic of the GOS as a function of the GOS resistance and location.

Dates and versions

lirmm-00370370 , version 1 (24-03-2009)

Identifiers

Cite

Jean-Marc J.-M. Galliere, Michel Renovell, Florence Azaïs, Yves Bertrand. Viability of a Delay Testing of Gate Oxide Short Transistors. Journal of Computer Science and Technology, 2005, 20 (2), pp.6. ⟨10.1007/s11390-005-0195-x⟩. ⟨lirmm-00370370⟩
58 View
0 Download

Altmetric

Share

Gmail Facebook X LinkedIn More