Impact of Resistive-Open Defects on SRAM Error Rate Induced by Alpha Particles and Neutrons

Paolo Rech 1 Jean-Marc Galliere 1 Patrick Girard 1 Frédéric Wrobel 2 Frédéric Saigné 2 Luigi Dilillo 1, *
* Auteur correspondant
1 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
2 IES - Institut d’Electronique et des Systèmes
Abstract : This paper presents the results of SPICE simulations of terrestrial radiation induced effects on SRAM cells in which resistive-open defects are introduced. This kind of defect is difficult to be detected with standard manufacturing tests. Although the presence of the defect may not affect the memory functionality when not exposed to radiation, it alters the radiation induced error rate of the cell both under static and dynamic conditions. Moreover, the defect can increase the SRAM radiation-induced error rate when operations are applied to the cell (dynamic mode). For the purpose of estimating the impact of resistive-open defects on SRAM radiation sensitivity, we consider defects with different resistive values and compare the analytically calculated error rates during different SRAM operating modes.
Keywords : SPICE simulation SRAM error rate alpha particle neutron radiation induced error rate resistive-open defect impact terrestrial radiation induced effect
Type de document :
Article dans une revue
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (3), pp.855-861. 〈10.1109/TNS.2011.2123114〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00805046
Contributeur : Luigi Dilillo <>
Soumis le : mardi 26 mars 2013 - 19:44:07
Dernière modification le : mercredi 30 mai 2018 - 09:34:04

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SYSMIC | LIRMM | LIRMM_MIC | MIC | MIPS | UNIV-MONTPELLIER | IES

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Paolo Rech, Jean-Marc Galliere, Patrick Girard, Frédéric Wrobel, Frédéric Saigné, et al.. Impact of Resistive-Open Defects on SRAM Error Rate Induced by Alpha Particles and Neutrons. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (3), pp.855-861. 〈10.1109/TNS.2011.2123114〉. 〈lirmm-00805046〉

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